What is ion implantation techniques?
Ion implantation is not a surface coating process, it is a technique which implants ions of nitrogen or carbon below the substrate surface and into the matrix of the substrate material. Most ions are implanted to improve wear, oxidation and fatigue resistance.
What are advantages of ion implantation?
The advantages of ion implantation include the ability to implant virtually any ion species into any substrate with a high level of control of location (lateral and depth) and composition. Ion implantation also has the disadvantages of being a line-of-sight process and requiring high capital cost equipment.
What is ion implantation in VLSI?
Ion implantation is a low-temperature technique for the introduction of impurities (dopants) into semiconductors and offers more flexibility than diffusion. For instance, in MOS transistors, ion implantation can be used to accurately adjust the threshold voltage.
Which material can be deposited by ion implantation technique?
Ion implantation may be used to induce nano-dimensional particles in oxides such as sapphire and silica.
What is the difference between diffusion and ion implantation?
Ion implantation and diffusion are two techniques used in the production of semiconductors with some other materials. The main difference between ion implantation and diffusion is that ion implantation is isotropic and very directional whereas diffusion is isotropic and there is lateral diffusion.
What is ion implantation equipment?
Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy, and a target chamber, where the ions impinge on a target, which is the material to be implanted.
What are the pros and cons of ion implantation vs diffusion?
Ion implantation involves the bombardment of the substrate with ions, accelerating to higher velocities. Advantages: Diffusion creates no damage and batch fabrication is also possible. Ion implantation is a low-temperature process. It allows you to control the precise dose and the depth.
What is ion implantation in semiconductor?
Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research.
Why high vacuum is required for ion implantation process?
In the ion implantation process, dopant atoms are first ionized in an ion source. Ion implanters must be maintained under high vacuum to permit linear free travel of the ions without occurrence of dispersion due to collisions with ambient gas molecules.