What is the electron mobility of silicon?
In silicon (Si) the electron mobility is of the order of 1,000, in germanium around 4,000, and in gallium arsenide up to 10,000 cm2/ (V⋅s). Hole mobilities are generally lower and range from around 100 cm2/ (V⋅s) in gallium arsenide, to 450 in silicon, and 2,000 in germanium.
What is electron diffusion coefficient?
The diffusion constant for electrons is Dn = 22.5cm2/s, the diffusion constant for holes is Dp = 5.2cm2/s, and the temperature is 300 K. The diffusion current density can be calculated by equation 1. 1.
What is breakdown field of silicon?
Basic Properties
| Breakdown field | ≈3·105V/cm |
|---|---|
| Mobility holes | ≤450 cm2 V-1s-1 |
| Diffusion coefficient electrons | ≤36 cm2/s |
| Diffusion coefficient holes | ≤12 cm2/s |
| Electron thermal velocity | 2.3·105m/s |
Why is the drift velocity of holes smaller than that of electrons in intrinsic silicon?
In an applied electric field, valence electrons cannot move as freely as the free electrons because their movement is restricted. Since holes are subjected to the stronger atomic force pulled by the nucleus than the electrons residing in the higher shells or farther shells, holes have a lower mobility.
How do you find electron mobility?
The measurement of how fast an electron can move through a semiconductor or a metal which is under the influence of an external electric field is known as electron mobility. We can show electron mobility mathematically by the equation, μ=VdE .
What is the resistivity of silicon?
Resistivity and Temperature Coefficient at 20 C
| Material | Resistivity ρ (ohm m) | Ref |
|---|---|---|
| Germanium* | 1-500 | 1 |
| Silicon* | 0.1-60 | 1 |
| Glass | 1-10000 | 1 |
| Quartz (fused) | 7.5 | 1 |
What is silicon diffusion?
Diffusion is the “smoothing out” that occurs in any situation where a high concentration of particles exists in one place and the particles can undergo random motion. The natural tendency is for particles to move towards regions of lower concentration. Diffusion of dopants in silicon.
What is the intrinsic electron concentration at T 300K in silicon?
6. What is the intrinsic electrons concentration at T=300K in Silicon? We get, ni=1.5*1010cm-3.
What is the dielectric constant of silicon?
11.7
Basic Parameters at 300 K
| Crystal structure | Diamond |
|---|---|
| Auger recombination coefficient Cp | 3·10-31cm6 s-1 |
| Debye temperature | 640 K |
| Density | 2.329 g cm-3 |
| Dielectric constant | 11.7 |
What is the breakdown voltage of silicon diode?
Reverse break down voltage for silicon diode is 6V for a particular doping concentration and forward break down voltage is 0.3V then find approximate current through battery in the given circuit 1092 1092 (1) 2 Amp (2) 1.3 Amp (3) 1 Amp (4) T Amp.
Why electron has higher mobility than holes?
The electron mobilty is often greater than hole mobility because quite often, the electron effective mass is smaller than hole effective mass. The relaxation times are often of the same order of magnitude for electrons and holes and therefore, they do not make too much difference.
Why holes are heavier than electrons?
As the hole velocity is smaller, a hole spends more time in the interaction region, i.e. holes strongly interact with phonons. This leads to larger effective mass. In scientific words, phonon renormalization of the effective mass of holes is larger than that for electrons.